? semiconductor components industries, llc, 2005 february, 2005 ? rev. xxx 1 publication order number: NTHD5905T1/d NTHD5905T1 power mosfet dual p?channel chipfet 3.0 amps, 8 volts features ? low r ds(on) for higher efficiency ? logic level gate drive ? miniature chipfet surface mount package applications ? power management in portable and battery ? powered products; i.e., cellular and cordless telephones and pcmcia cards maximum ratings (t a = 25 c unless otherwise noted) rating symbol 5 secs steady state unit drain ? source voltage v ds ? 8.0 v gate ? source voltage v gs 8.0 v continuous drain current (t j = 150 c) (note 1) t a = 25 c t a = 85 c i d 4.1 2.9 3.0 2.2 a pulsed drain current i dm 10 a continuous source current (diode conduction) (note 1) i s ? 1.8 ? 0.9 a maximum power dissipation (note 1) t a = 25 c t a = 85 c p d 2.1 1.1 1.1 0.6 w operating junction and storage temperature range t j , t stg ? 55 to +150 c 1. surface mounted on 1 x 1 fr4 board. g s d p ? channel mosfet 1 1 1 g s d 2 2 2 p ? channel mosfet d 2 2 s g 2 d 1 1 g 1 s d 2 d 1 1 2 3 4 5 6 7 8 device package shipping ordering information NTHD5905T1 chipfet 3000/tape & reel pin connections chipfet case 1206a style 2 marking diagram a9 a9 = specific device code 1 2 3 4 8 7 6 5 dual p ? channel 3.0 amps, 8 volts r ds(on) = 90 m http://onsemi.com
NTHD5905T1 http://onsemi.com 2 thermal characteristics characteristic symbol typ max unit maximum junction ? to ? ambient (note 2) t 5 sec steady state r thja 50 90 60 110 c/w maximum junction ? to ? foot (drain) steady state r thjf 30 40 c/w electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 ? ? v gate ? body leakage i gss v ds = 0 v, v gs = 8.0 v ? ? 100 na zero gate voltage drain current i dss v ds = ? 6.4 v, v gs = 0 v ? ? ? 1.0 a v ds = ? 6.4 v, v gs = 0 v, t j = 85 c ? ? ? 5.0 on ? state drain current (note 3) i d(on) v ds ? 5.0 v, v gs = ? 4.5 v ? 10 ? ? a drain ? source on ? state resistance (note 3) r ds(on) v gs = ? 4.5 v, i d = ? 3.0 a ? 0.075 0.090 () v gs = ? 2.5 v, i d = ? 2.5 a ? 0.110 0.130 v gs = ? 1.8 v, i d = ? 1.0 a ? 0.150 0.180 forward transconductance (note 3) g fs v ds = ? 5.0 v, i d = ? 3.0 a ? 7.0 ? s diode forward voltage (note 3) v sd i s = ? 0.9 a, v gs = 0 v ? ? 0.8 ? 1.2 v dynamic (note 4) total gate charge q g v 40 v v 45 v ? 5.5 9.0 nc gate ? source charge q gs v ds = ? 4.0 v, v gs = ? 4.5 v, i d = ? 3.0 a ? 0.5 ? gate ? drain charge q gd i d = ? 3 . 0 a ? 1.5 ? turn ? on delay time t d(on) ? 10 15 ns rise time t r v dd = ? 4.0 v, r l = 4 i d 10 a v gen = 45 v ? 45 70 turn ? off delay time t d(off) i d ? 1.0 a, v gen = ? 4.5 v, r g = 6 ? 30 45 fall time t f r g 6 ? 10 15 source ? drain reverse recovery time t rr i f = ? 0.9 a, di/dt = 100 a/ s ? 30 60 2. surface mounted on 1 x 1 fr4 board. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
NTHD5905T1 http://onsemi.com 3 typical electrical characteristics figure 1. output characteristics 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 2.5 v 2 v 1.5 v 1 v c oss 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 t c = ? 55 c 25 c 125 c v gs = 4.5 v v gs = 1.8 v 5 4 3 2 1 0 0234 0.30 0.25 0.15 0.05 0 0246810 1000 400 200 0 048121620 c iss c rss 1.6 1.4 1.2 1.0 0.8 0.6 ? 50 ? 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 3 a 1 3.0 0.20 0.10 800 600 v gs = 2.5 v 4 56 ? v ds , drain ? to ? source voltage (v) ? v gs , gate ? to ? source voltage (v) ? i d, drain current (a) ? i d , drain current (a) ? v ds , drain ? to ? source voltage (v) c, capacitance (pf) r ds(on), on ? resistance ( ? ) q g, total gate charge (nc) v gs, gate ? to ? source voltage (v) (normalized) t j , junction temperature ( c) r ds(on), on ? resistance ( ? ) figure 2. transfer characteristics figure 3. on ? resistance vs. drain current figure 4. capacitance figure 5. gate charge figure 6. on ? resistance vs. junction temperature v gs = 5 thru 3 v ? i d, drain current (a)
NTHD5905T1 http://onsemi.com 4 typical electrical characteristics ? v ds , drain ? to ? source voltage (v) i s, source current (a) ? v gs , gate ? to ? source voltage (v) r ds(on), on ? resistance ( ? ) t j , temperature ( c) v gs (th), varience (v) 1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 0.20 0.15 0.10 0.05 0 012345 i d = 3 a 0.3 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a power (w) 50 40 30 20 10 10 10 ? 3 ? 2 ? 1 10 1 10 100 600 time (sec) 0.4 0 10 ? 4 1.4 0.25 0.2 0.1 0.0 ? 0.1 ? 0.2 figure 7. source diode forward voltage figure 8. on ? resistance vs. gate ? to ? source voltage figure 9. threshold voltage figure 10. single pulse power
NTHD5905T1 http://onsemi.com 5 typical electrical characteristics 2 1 0.1 0.01 10 10 10 ? 4 ? 3 ? 2 ? 1 10 1 10 0.02 square wave pulse duration (sec) duty cycle = 0.5 0.2 single pulse 0.1 0.05 normalized effective transient thermal impedance 2 1 0.1 0.01 10 10 10 ? 4 ? 3 ? 2 ? 1 10 1 10 100 600 square wave pulse duration (sec) normalized effective transient thermal impedance duty cycle = 0.5 0.2 single pulse 0.1 0.05 0.02 1. duty cycle, d = 2. per unit base = r thja = 90 c/w 3. t jm ? t a = p dm z thja (t) 4. surface mounted t 1 t 2 p dm notes: t 1 t 2 figure 11. normalized thermal transient impedance, junction ? to ? ambient figure 12. normalized thermal transient impedance, junction ? to ? foot
NTHD5905T1 http://onsemi.com 6 notes
NTHD5905T1 http://onsemi.com 7 package dimensions chipfet case 1206a ? 03 issue d b s c d g l a 1234 8765 m j k 1 2 3 4 8 7 6 5 dim min max min max inches millimeters a 2.95 3.10 0.116 0.122 b 1.55 1.70 0.061 0.067 c 1.00 1.10 0.039 0.043 d 0.25 0.35 0.010 0.014 g 0.65 bsc 0.025 bsc j 0.10 0.20 0.004 0.008 k 0.28 0.42 0.011 0.017 l 0.55 bsc 0.022 bsc m 5 nom s 1.80 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. mold gate burrs shall not exceed 0.13 mm per side. 4. leadframe to molded body offset in horizontal and vertical shall not exceed 0.08 mm. 5. dimensions a and b exclusive of mold gate burrs. 6. no mold flash allowed on the top and bottom lead surface. 7. 1206a?01 and 1206a?02 obsolete. new standard is 1206a?03. 0.05 (0.002) 5 nom style 2: pin 1. source 1 2. gate 1 3. source 2 4. gate 2 5. drain 2 6. drain 2 7. drain 1 8. drain 1 2.00 0.072 0.080
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